2SJ496
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Drain to source breakdown
voltage
V(BR)DSS
Gate to source breakdown
voltage
V(BR)GSS
Zero gate voltege drain
I DSS
current
Gate to source leak current IGSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
RDS(on)
Min
–60
±20
—
—
–1.0
—
—
Forward transfer admittance |yfs|
3
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance Crss
—
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body to drain diode forward VDF
—
voltage
Body to drain diode reverse trr
—
recovery time
Note: 1. Pulse test
Typ
—
—
—
—
—
0.12
0.17
5
600
290
80
10
25
95
55
–1.0
65
Max
—
—
–10
±10
–2.0
0.16
0.24
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = –10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = –60 V, VGS = 0
VGS = ±16V, VDS = 0
ID = –1mA, VDS = –10V
ID = –2.5A
VGS = –10V*1
ID = –2.5A
VGS = –4V*1
ID = 2.5A, VDS = 10V*1
VDS = –10V
VGS = 0
f = 1MHz
VGS = –10V, ID = –2.5A
RL = 12Ω
ID = –5A, VGS = 0
IF = –5A, VGS = 0
diF/ dt = 50A/µs
3