General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

FEATUREs
• 5.5 A, 20 V.
   RDS(ON) = 0.021 Ω @ VGS = 4.5 V
   RDS(ON) = 0.035 Ω @ VGS = 2.5 V
• Extended VGSS range (±12V) for battery applications
• Low gate charge
• High performance trench technology for extremely low RDS(ON)

APPLICATIONs
• Load switch
• Motor drive
• DC/DC conversion
• Power management