General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

FEATUREs
• 5.5 A, 20 V. RDS(ON) = 18 mΩ @ VGS = 4.5V RDS(ON) = 25 mΩ @ VGS = 2.5V
• Extended VGSS range (±12V) for battery applications
• ESD protection diode (note 3)
• High performance trench technology for extremely low RDS(ON)
• Low profile TSSOP-8 package

APPLICATIONs
• Load switch
• Motor drive
• DC/DC conversion
• Power management