General Description
This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

FEATUREs
· 3.0 A, 20 V. RDS(ON) = 70 mW @ VGS = 4.5 V
               RDS(ON) = 95 mW @ VGS = 2.5 V
· Low gate charge (3.3 nC)
· High performance trench technology for extremely low RDS(ON)
· High power and current handling capability

APPLICATIONs
· DC/DC converter
· Battery Protection
· Power Management