U633H04SK45 Просмотр технического описания (PDF) - Zentrum Mikroelektronik Dresden AG
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U633H04SK45 Datasheet PDF : 13 Pages
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Preliminary
U633H04
NONVOLATILE MEMORY OPERATIONS
MODE SELECTION
E
W HSB
A8 - A0
(hex)
Mode
I/O
Power
Notes
H
X
H
X
L
H
H
X
L
L
H
X
X
X
L
X
Not Selected
Read SRAM
Write SRAM
STORE/Inhibit
Output High Z
Output Data
Input Data
Output High Z
Standby
Active
l
Active
ICC2/Standby
m
k: reserved for future development
l: I/O state assumes that G ≤ VIL. Activation of nonvolatile cycles does not depend on the state of G.
m: HSB initiated STORE operation actually occurs only if a WRITE has been done since last STORE operation. After the STORE (if any)
completes, the part will go into standby mode inhibiting all operation until HSB rises.
No.
PowerStore Power Up RECALL/
Hardware Controlled STORE
Symbol
Alt.
IEC
24 Power Up RECALL Durationn, e
25 STORE Cycle Duration
26 HSB Low to Inhibit One
27 HSB High to Inhibit Offe
28 External STORE Pulse Widthe
HSB Output Low Currente, o
HSB Output High Currente, o
Low Voltage Trigger Level
tRESTORE
tHLQX
tHLQZ
tHHQX
tHLHX
IHSBOL
IHSBOH
VSWITCH
td(H)S
tdis(H)S
ten(H)S
tw(H)S
Conditions
VCC > 4.5 V
HSB = VOL
HSB = VIL
Min. Max. Unit
650 µs
10 ms
1
µs
700 ns
250
ns
3
mA
5
60 µA
4.0 4.5 V
n: An automatic RECALL also takes place at power up, starting when VCC exceeds VSWITCH and takes tRESTORE. VCC must not drop below
VSWITCH once it has been exceeded for the RECALL to function properly.
o: HSB is an I/O that has a week internal pullup; it is basically an open drain output. It is meant to allow up to 32 U633H04 to be ganged
together for simultaneous storing. Do not use HSB to pullup any external circuitry other than other U633H04 HSB pins.
December 12, 1997
7
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