U633H04SK45 Просмотр технического описания (PDF) - Zentrum Mikroelektronik Dresden AG
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U633H04SK45 Datasheet PDF : 13 Pages
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U633H04
Block Diagram
A5
A6
A7
A8
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
EEPROM
Array
STORE
SRAM
Array
RECALL
16 Rows x
(32 x 8) Columns
Column I/O
Column Decoder
A0 A1 A2 A3 A4
Truth Table for SRAM Operations
VCCX
VSS
VCA P
VCCX VCAP
Power
Control
Preliminary
Store/
Recall
HSB
G
E
W
Operating Mode
E
HSB
W
G
DQ0 - DQ7
Standby/not selected
H
Internal Read
L
Read
L
Write
L
* H or L
H
*
*
High-Z
H
H
H
High-Z
H
H
L
Data Outputs Low-Z
H
L
*
Data Inputs High-Z
Characteristics
All voltages are referenced to VSS = 0 V (ground).
All characteristics are valid in the power supply voltage range and in the operating temperature range specified.
Dynamic measurements are based on a rise and fall time of ≤ 5 ns, measured between 10 % and 90 % of V I, as well as
input levels of VIL = 0 V and VIH = 3 V. The timing reference level of all input and output signals is 1.5 V,
with the exception of the tdis-times and ten-times, in which cases transition is measured ± 200 mV from steady-state voltage.
Absolute Maximum Ratingsa
Symbol
Min.
Max.
Unit
Power Supply Voltage
Input Voltage
VCC
-0.5
7
V
VI
-0.3
VCC+0.5
V
Output Voltage
VO
-0.3
VCC+0.5
V
Power Dissipation
PD
Operating Temperature
C-Type
Ta
0
K-Type
-40
1
W
70
°C
85
°C
Storage Temperature
Tstg
-65
150
°C
a: Stresses greater than those listed under „Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress
rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2
December 12, 1997
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