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RMWP38001

37–40 GHz Power Amplifier MMIC

Fairchild Semiconductor 

DRAIN SUPPLY

Vd = +4V

L = BOND WIRE INDUCTANCE

10,000pF

100pF L

L

100pF

L

L

L

MMIC CHIP

L

10,000pF

L

100pF

100pF

L

L

REFERENCE DETECTOR

BIAS VOLTAGE

Vrefbias (typ. -2.5V)

R = 50 kΩ

REFERENCE DETECTOR

VOLTAGE Vref

RF IN

RF OUT

GROUND

(Back of Chip)

L

100pF

L

DETECTOR

VOLTAGE Vdet

R = 50 kΩ

DETECTOR BIAS

VOLTAGE VdetBias

(typ. -2.5V)

GATE SUPPLY

Vg

Note:

For output power level detection, bias both detector and reference diodes. DC voltage difference between detector and reference can be used to

measure output power after calibration. If output power level detection is not desired, do not make connection to detector bond pad.

Figure 3. Recommended Application Schematic Circuit Diagram

DIE-ATTACH

80Au/20Sn

10, 00 0pF

Vdd (POSITIVE)

10, 00 0pF

10 0pF

5 MIL THICK

ALUMINA

50Ω

RF INPUT

10 0pF

10 0pF

10 0pF

REFERENCE DETECTOR

BIAS VOLTAGE VrefBias

50 KΩ

REFERENCE DETECTOR

VOLTAGE Vref

5 MIL THICK

ALUMINA

50

RF OUTPUT

Vg (NEGATIVE)

2 MIL GAP

DETECTOR

VOLTAGE Vdet

50 KΩ

DETECTOR

BIAS VOLTAGE Vdetbias

L < 0.015"

(2 Places)

Note:

1. Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.

2. If output power level detection is not desired, do not make connection to detector bond pad.

Figure 4. Recommended Assembly Diagram

©2004 Fairchild Semiconductor Corporation

RMWP38001 Rev. C

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