RMWP38001 Просмотр технического описания (PDF) - Fairchild Semiconductor
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RMWP38001 Datasheet PDF : 8 Pages
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Electrical Characteristics (At 25°C), 50Ω system, Vd = +4V, Quiescent Currrent Idq = 250mA
Parameter
Frequency Range
Gate Supply Voltage (Vg)1
Gain Small Signal at Pin = -10dBm
Gain Variation vs. Frequency
Gain at 1dB Compression
Power Output at 1dB Compression
Power Output Saturated: Pin = +5dBm
Drain Current at Pin = -10dBm
Drain Current at 1dB Compression
Drain Current at Saturated: Pin = +5dBm
Power Added Efficiency (PAE): at P1dB
Input Return Loss (Pin = -10dBm)
Output Return Loss (Pin = -10dBm)
OIP3
Noise Figure
Detector Voltage
(Pout = +15dBm)
(Bias Current = 0.02–0.05mA)
Note:
1. Typical range of gate voltage is -2.0 to 0V to set Idq of 250mA.
Min
Typ
Max
37
40
-0.5
18
22
4
21
22
21
23.5
250
280
270
15
12
7
30
6
0.15
Units
GHz
V
dB
dB
dB
dBm
dBm
mA
mA
mA
%
dB
dB
dBm
dB
V
©2004 Fairchild Semiconductor Corporation
RMWP38001 Rev. C
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