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RMWP38001

37–40 GHz Power Amplifier MMIC

Fairchild Semiconductor 

June 2004

RMWP38001

37–40 GHz Power Amplifier MMIC

General Description

The RMWP38001 is a 4-stage GaAs MMIC amplifier

designed as a 37 to 40 GHz Power Amplifier for use in point

to point and point to multi-point radios, and various

communications applications. In conjunction with other

Fairchild Semiconductor amplifiers, multipliers and mixers

it forms part of a complete 38 GHz transmit/receive chipset.

The RMWP38001 utilizes our 0.25µm power PHEMT

process and is sufficiently versatile to serve in a variety of

power amplifier applications.

Features

• 4mil substrate

• Small-signal gain 22dB (typ.)

• 1dB compressed Pout 22dBm (typ.)

• Chip size 3.4mm x 1.4mm

Device

Absolute Ratings

Symbol

Vd

Vdg

ID

PIN

TC

TSTG

R JC

Parameter

Positive DC Voltage (+4V Typical)

Simultaneous (Vd–Vg)

Positive DC Current

RF Input Power (from 50Ω source)

Operating Baseplate Temperature

Storage Temperature Range

Thermal Resistance (Channel to Backside)

Ratings

+6

8

483

+8

-30 to +85

-55 to +125

46

Units

V

V

mA

dBm

°C

°C

°C/W

©2004 Fairchild Semiconductor Corporation

RMWP38001 Rev. C

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