6V62160E Просмотр технического описания (PDF) - LAPIS Semiconductor Co., Ltd.

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6V62160E

4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM

LAPIS Semiconductor Co., Ltd. 

FEDD56V62160E-07

MD56V62160E

Bank Interleave Random Row Read/Write Cycle @CAS Latency = 2, Burst Length = 4

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

CLK

CKE

High

CS

RAS

CAS

ADDR RAa

CAa

RBb

A12,

A13

A10

RAa

RBb

CBb

RAc

CAc

RAc

DQ

QAa0 QAa1 QAa2 QAa3

QBb0 QBb1 QBb2 QBb3

QAc0 QAc1 QAc2 QAc3

WE

UDQM,

LDQM

Row Active

(A-Bank)

Row Active

(B-Bank)

Write Command

(B-Bank)

Read Command

(A-Bank)

Read Command

(A-Bank)

Precharge Command

(A-Bank)

Row Active

(A-Bank)

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