6V62160E Просмотр технического описания (PDF) - LAPIS Semiconductor Co., Ltd.

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6V62160E

4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM

LAPIS Semiconductor Co., Ltd. 

MD56V62160E

4-Bank  1,048,576-Word  16-Bit SYNCHRONOUS DYNAMIC RAM

FEDD56V62160E-07

Issue Date: Nov. 18, 2013

DESCRIPTION

The MD56V62160E is a 4-Bank  1,048,576-word  16-bit Synchronous dynamic RAM fabricated in

LAPIS Semiconductor’s silicon-gate CMOS technology. The device operates at 3.3 V. The inputs and

outputs are LVTTL compatible.

FEATURES

• Silicon gate, quadruple poly-silicon CMOS, 1-transistor memory cell

• 4-Bank  1,048,576-word  16-bit configuration

• Single 3.3 V power supply, 0.3 V tolerances

• Input : LVTTL compatible

• Output : LVTTL compatible

• Refresh : 4096 cycles/64 ms

• Programmable data transfer mode

- CAS Latency (2, 3)

- Burst Length (1, 2, 4, 8, Full Page)

- Data scramble (sequential, interleave)

• CBR auto-refresh, Self-refresh capability

• Packages:

54-pin 400 mil plastic TSOP (TypeII) (P-TSOP(2)54-400-0.80-UK6)

(Product: MD56V62160E-xxTA)

xx indicates speed rank.

PRODUCT FAMILY

Family

MD56V62160E-10

Max.

Frequency

100 MHz

Access Time (Max.)

tAC2

6 ns

tAC3

6 ns

1/33

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