VG3617161ET Просмотр технического описания (PDF) - Vanguard International Semiconductor

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VG3617161ET

1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM

Vanguard International Semiconductor  

VIS

VG3617161ET

1,048,576 x 16 - Bit

CMOS Synchronous Dynamic RAM

Absolute Maximum Ratings(1)

Parameter

Voltage on any pin relative to Vss

Supply voltage relative to Vss

Short circuit output current

Power dissipation

Operating temperature

Storage temperature

Symbol

Value

Unit

VIN,VOUT

-1.0 to +4.6

V

VDD,VDDQ

-1.0 to +4.6

V

IOUT

50

mA

PD

1.0

W

TOPT

0 to + 70

°C

TSTG

-55 to + 125

°C

Recommended DC Operating Conditions (TA=0~70°C)

Parameter

Supply Voltage

Input High Voltage, all inputs

Input Low Voltage, all inputs

Symbol

VDD

VIH

VIL

Min

Typ

Max

Unit

Note

3.0

3.3

3.6

V

2.0

–

VDD+0.3

V

I

-0.3

–

0.8

V

II

Note I.Overshoot limit : VIH(MAX.)=VDDQ+2.0V with a pulse width < 3ns

II .Undershoot limit : VIL=VSSQ-2.0V with a pulse width< 3ns and -1.5V with a pulse width< 5ns

DC Electrical Characteristics

Parameter

IIL

IOL

VOH

VOL

Description

Input Leakage Current

( 0V ≤ VIN ≤ VDD All other pins not under test = 0V)

Output Leakage Current

Output disable, (0V ≤ VOUT ≤ VDDQ )

LVTTL Output ”H” Level Voltage(lOUT = -2mA)

LVTTL Output ”L” Level Voltage(lOUT = 2mA)

Min.

-5

-5

2.4

-

Max.

5

5

-

0.4

Unit Note

µA

µA

V

V

Capacitance

(TA=25°C,f=1MHZ)

Parameter

Symbol

Typ

Input capacitance(CLK)

C11

2.5

Input capacitance(all input pins except data

C12

2.5

pins)

Data input/output capacitance

CI/O

4.0

Document:1G5-0189

Rev.1

Max

Unit

4

pF

5

pF

6.5

pF

Page 4

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