VG3617161ET Просмотр технического описания (PDF) - Vanguard International Semiconductor
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VG3617161ET Datasheet PDF : 69 Pages
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VIS
VG3617161ET
1,048,576 x 16 - Bit
CMOS Synchronous Dynamic RAM
(1/3)
2.4 Operative Command Table
Current state CS RAS
Idle
H
X
L
H
L
H
L
H
L
L
L
L
L
L
L
L
Row active
H
X
L
H
L
H
L
H
L
L
L
L
L
L
L
L
Read
H
X
L
H
L
H
Write
L
H
L
H
L
L
L
L
L
L
L
L
H
X
L
H
L
H
L
H
L
H
L
L
L
L
L
L
L
L
CAS WE
Address
X
XX
H
XX
L
H BA,CA,A10
L
L BA,CA,A10
H
H BR,RA
H
L BA,A10
L
HX
L
L Op-Code
X
XX
H
XX
L
H BA,CA,A10
L
L BA,CA,A10
H
H BA,RA
H
L BA,A10
L
HX
L
L Op-Code
X
XX
H
HX
H
LX
L
H BA,CA,A10
L
L BA,CA,A10
H
H BA,RA
H
L BA,A10
L
HX
L
L Op-Code
X
XX
H
HX
H
LX
L
H BA,CA,A10
L
L BA,CA,A10
H
H BA,RA
H
L BA,A10
L
HX
L
L Op-Code
Command
DESL
NOP or BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MPS
DESL
NOP or BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
Action
Nop or Power down
Nop or Power down
ILLEGAL
ILLEGAL
Row active
Nop
Refresh or Self refresh
Mode register access
Nop
Nop
Begin read:Determine AP
Begin write:Determine AP
ILLEGAL
Precharge
ILLEGAL
ILLEGAL
Continue burst to end → Row active
Continue burst to end → Row active
Burst stop → Row active
Term burst, new read:Determine AP
Term burst, start write:Determine AP
ILLEGAL
Term burst,precharging
ILLEGAL
ILLEGAL
Continue burst to end → write recovering
Continue burst to end → Write recovering
Burst stop → Row active
Term burst, start read: determine AP
Term burst, new write:Determine AP
ILLEGAL
Term burst precharging
ILLEGAL
ILLEGAL
Notes
2
2
3
3
4
5
5
3
6
7
7,8
3
7,8
7
3
9
Document:1G5-0189
Rev.1
Page 10
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