PHC21025,118 Просмотр технического описания (PDF) - NXP Semiconductors.
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PHC21025,118 Datasheet PDF : 16 Pages
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NXP Semiconductors
PHC21025
Complementary intermediate level FET
600
C
(pF)
400
200
0
0
mbe137
Ciss
Coss
Crss
10
20
30
VDS (V)
600
C
(pF)
400
200
0
0
mbe144
Ciss
Coss
Crss
−10
−20 VDS (V) −30
Fig 5. Capacitance as a function of drain-source
voltage; N-channel; typical values
16 VGS =
ID
10 V 6 V
(A)
12
5V
mbe142
8
4.5 V
4V
4
3.5 V
3V
0
0
2
4
6
8
10
12
VDS (V)
Fig 6. Capacitance as a function of drain-source
voltage; P-channel; typical values
−10 VGS =
ID
−10 V −7.5 V
(A)
−8
mbe154
−6 V
−6
−4
−2
0
0
−5 V
−4.5 V
−4 V
−3.5 V
−3 V
−2.5 V
−2
−4
−6
−8 −10 −12
VDS (V)
Fig 7. Output characteristics: drain current as a
function of drain-source voltage; N-channel;
typical values
Fig 8. Output characteristics: drain current as a
function of drain-source voltage; P-channel;
typical values
PHC21025
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 17 March 2011
© NXP B.V. 2011. All rights reserved.
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