PHC21025,118 Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
Список матч
PHC21025,118 Datasheet PDF : 16 Pages
| |||
NXP Semiconductors
PHC21025
Complementary intermediate level FET
2.5
Ptot
(W)
2.0
1.5
1.0
0.5
0
0
mlb836
50
100
150
200
Ts (°C)
Fig 1. Power derating curve
102
ID
(A)
10
(1)
1
P
10−1
tp
δ=
T
10−2
10−1
tp
T
t
1
Fig 2.
δ = 0.01.
Ts = 80 °C.
(1) RDSon limitation.
SOAR; N-channel
mlb833
tp =
10μs
1 ms
DC
0.1 s
10
102
VDS (V)
Fig 3.
δ = 0.01
Ts = 80 °C.
(1) RDSon limitation.
SOAR; P-channel
−102
ID
(A)
−10
(1)
−1
P
−10−1
tp
δ=
T
−10−−210−1
tp
T
t
−1
mbe155
tp =
10 μs
1 ms
DC
0.1 s
−10
−102
VDS (V)
PHC21025
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 17 March 2011
© NXP B.V. 2011. All rights reserved.
4 of 16
Share Link: 