PHC21025,118 Просмотр технического описания (PDF) - NXP Semiconductors.

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PHC21025,118

Complementary intermediate level FET

NXP Semiconductors. 

NXP Semiconductors

PHC21025

Complementary intermediate level FET

1.2

k

1.1

1.0

0.9

0.8

0.7

0.6

−50

0

mbe138

50

100

150

Tj (°C)

1.8

k

1.6

1.4

1.2

1.0

0.8

0.6

−50

0

mbe139

(1)

(2)

50

100

150

Tj (°C)

Typical VGSth at ID = 1 mA; VDS = VGS = VGSth.

Fig 17. Temperature coefficient of gate-source

threshold voltage

1.8

k

1.6

1.4

Typical RDSon at:

(1) ID = 2.2 A; VGS = 10 V.

(2) ID = 1 A; VGS = 4.5 V.

Fig 18. Temperature coefficient of drain-source

on-state resistance; N-channel

mbe146

(1)

(2)

1.2

1.0

0.8

0.6

−50

0

50

100

150

Tj (°C)

Typical RDSon at:

(1) ID = -1 A; VGS = -10 V.

(2) ID = -0.5 A; VGS = -4.5 V.

Fig 19. Temperature coefficient of drain-source on-state resistance; P-channel

PHC21025

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 04 — 17 March 2011

© NXP B.V. 2011. All rights reserved.

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