PHC21025,118 Просмотр технического описания (PDF) - NXP Semiconductors.
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PHC21025,118 Datasheet PDF : 16 Pages
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NXP Semiconductors
6
mbe159
IS
(A)
4
(1) (2) (3)
2
PHC21025
Complementary intermediate level FET
−6
mbe158
IS
(A)
−4
(1) (2)
(3)
−2
0
0
0.5
1
1.5
VSD (V)
VGD = 0.
(1) Tj = 150 °C.
(2) Tj = 25 °C.
(3) Tj = -55 °C.
Fig 13. Source current as a function of source-drain
voltage; N-channel; typical values
104
RDSon
(mΩ)
103
(1)(2)(3)(4) (5) (6)
mda217
102
0
0
−0.5
−1
−1.5
−2
VSD (V)
VGD = 0.
(1) Tj = 150 °C.
(2) Tj = 25 °C.
(3) Tj = -55 °C.
Fig 14. Source current as a function of source-drain
voltage; P-channel; typical values
104
mda165
RDSon
(mΩ)
103
(1)(2)(3)(4) (5)
10
0
2
4
6
8
10
VGS (V)
VDS ≥ ID x RDSon; Tj = 25 °C.
(1) ID = 0.1 A.
(2) ID = 0.5 A.
(3) ID = 1 A.
(4) ID = 2.2 A.
(5) ID = 3.5 A.
(6) ID = 7 A.
Fig 15. Drain-source on-state resistance as a function
of drain current; N-channel; typical values
102
0
−2
−4
−6
−8
−10
VGS (V)
-VDS ≥ -ID x RDSon; Tj = 25 °C.
(1) ID = -0.1 A.
(2) ID = -0.5 A.
(3) ID = -1 A.
(4) ID = -2.3 A.
(5) ID= -4.5 A.
Fig 16. Drain-source on-state resistance as a function
of drain current; typical values
PHC21025
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 17 March 2011
© NXP B.V. 2011. All rights reserved.
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