PHM15NQ20T Просмотр технического описания (PDF) - Philips Electronics

Номер в каталоге

Компоненты Описание

Список матч

PHM15NQ20T

TrenchMOS™ standard level FET

Philips Electronics 

Philips Semiconductors

PHM15NQ20T

TrenchMOS™ standard level FET

15

IS

(A)

VGS = 0 V

10

03aj32

5

150 °C

Tj = 25 °C

10

VGS

(V)

8

ID = 4 A

Tj = 25 °C

6

4

03aj34

40 V

160 V

VDD = 100 V

2

0

0

0.3

0.6

0.9

1.2

VSD (V)

0

0

10

20

30

40

50

QG (nC)

Tj = 25 °C and 150 °C; VGS = 0 V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

ID = 4 A; VDD = 40 V, 100 V, 60 V

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

9397 750 11845

Product data

Rev. 03 — 11 September 2003

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

8 of 13

Share Link: