PHM15NQ20T Просмотр технического описания (PDF) - Philips Electronics
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PHM15NQ20T Datasheet PDF : 13 Pages
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Philips Semiconductors
PHM15NQ20T
TrenchMOS™ standard level FET
15
ID
(A)
Tj = 25 °C
10
10 V 5 V 4.3 V
03aj29
4.1 V
15
ID
(A)
VDS > ID x RDSon
10
03aj31
3.9 V
5
3.7 V
VGS = 3.5 V
0
0
0.5
1
1.5 VDS (V) 2
5
150 °C
Tj = 25 °C
0
0
2
4 VGS (V) 6
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03aj30
120
3
Tj = 25 °C
VGS = 4.1 V
RDSon
(mΩ)
a
4.3 V
80
5V
2
10 V
03al52
40
1
0
0
5
10
ID (A) 15
0
-60
0
60
120
180
Tj (°C)
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 11845
Product data
Rev. 03 — 11 September 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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