PHM15NQ20T Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
Список матч
PHM15NQ20T Datasheet PDF : 13 Pages
| |||
Philips Semiconductors
PHM15NQ20T
TrenchMOS™ standard level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
PHM15NQ20T
QLPAK
Plastic surface mounted package; no leads; 8 terminals.
4. Limiting values
Version
SOT685
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
25 °C ≤ Tj ≤ 150 °C
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C
IS
source (diode forward) current (DC) Tmb = 25 °C
ISM
peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
EDS(AL)R repetitive drain-source avalanche
energy
unclamped inductive load; ID = 11 A;
tp = 0.14 ms; VDD ≤ 200 V; RGS = 50 Ω;
VGS = 10 V; starting Tj = 25 °C
unclamped inductive load;
ID = 1.1 A; tp = 0.014 ms; VDD ≤ 200 V;
RGS = 50 Ω; VGS = 10 V
Min
-
-
-
-
-
-
-
−55
−55
-
-
-
[1] -
[2]
Max Unit
200
V
200
V
±20
V
17.5 A
11
A
60
A
62.5 W
+150 °C
+150 °C
17.5 A
60
A
210
mJ
2.1
mJ
[1] Duty cycle limited by maximum junction temperature.
[2] Repetitive avalanche failure is not determined simply by thermal effects. Repetitive avalanche transients should only be applied for short
bursts, not every switching cycle.
9397 750 11845
Product data
Rev. 03 — 11 September 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
2 of 13
Share Link: 