PHB47NQ10T Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
Список матч
PHB47NQ10T Datasheet PDF : 13 Pages
| |||
NXP Semiconductors
PHB47NQ10T
N-channel TrenchMOS standard level FET
4.5
4
VGS(th)
(V)
3.5
3
2.5
2
1.5
1
0.5
0
−60 −20 20
003aaa023
max
typ
min
60 100 140 180
Tj (°C)
65
RDSon 60
(mΩ) 55
VGS = 5.5 V
50
45
40
35
30
25
20
15
5
25
45
6.0 V
003aaa102
6.5 V
7.0 V
7.5 V
8.0 V
10 V
65
85 105 125
ID (A)
Fig 10. Gate-source threshold voltage as a function of Fig 11. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
2.0
1.8
a
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
−60 -20
003aaa103
20
60 100 140 180
Tj (°C)
10
VGS
(V)
8
6
4
003aaa107
VDD = 20 V
VDD = 80 V
2
0
0 10 20 30 40 50 60 70
QG (nC)
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 13. Gate-source voltage as a function of gate
charge; typical values
PHB47NQ10T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
© NXP B.V. 2010. All rights reserved.
7 of 13
Share Link: 