PHB47NQ10T Просмотр технического описания (PDF) - NXP Semiconductors.
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PHB47NQ10T Datasheet PDF : 13 Pages
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PHB47NQ10T
N-channel TrenchMOS standard level FET
Rev. 02 — 25 February 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
DC-to-DC convertors
Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 2
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 3
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 40 A;
VDS = 80 V; Tj = 25 °C;
see Figure 13
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C;
see Figure 11 and 12
Min Typ Max Unit
-
-
100 V
-
-
47 A
-
-
166 W
-
21 -
nC
-
20 28 mΩ
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