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PHB47NQ10T Datasheet PDF : 13 Pages
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NXP Semiconductors
PHB47NQ10T
N-channel TrenchMOS standard level FET
ID 180
(A)
160
140
120
100
80
60
40
20
0
0
VGS = 10 V
8.0 V
003aaa100
20 V
7.5 V
7.0 V
2
4
6.5 V
6.0 V
5.5 V
5.0 V
4.5 V
6
8
10
VDS (V)
100
ID
(A)
80
60
40
20
0
0
003aaa101
Tj = 175 °C
25 °C
2
4
6
8
VGS (V)
Fig 6. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
10−1
ID
(A)
10−2
10−3
10−4
10−5
10−6
0
003aaa078
2%
typ
98%
1
2
3
4
5
VGS (V)
gfs 45
(S)
40
35
30
25
20
15
10
5
0
0
20
40
003aaa104
60
80
100
ID (A)
Fig 8. Sub-threshold drain current as a function of
gate-source voltage
Fig 9. Forward transconductance as a function of
drain current; typical values
PHB47NQ10T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
© NXP B.V. 2010. All rights reserved.
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