CY62146EV30LL(2009) Просмотр технического описания (PDF) - Cypress Semiconductor

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CY62146EV30LL
(Rev.:2009)

4-Mbit (256K x 16) Static RAM

Cypress Semiconductor 

CY62146EV30 MoBL®

Thermal Resistance

Tested initially and after any design or process changes that may affect these parameters.

Parameter

ΘJA

ΘJC

Description

Thermal Resistance

(Junction to Ambient)

Thermal Resistance

(Junction to Case)

Test Conditions

Still Air, soldered on a 3 × 4.5 inch,

two-layer printed circuit board

VFBGA

75

10

TSOP II

77

13

Unit

°C/W

°C/W

R1

VCC

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

Figure 3. AC Test Loads and Waveforms

ALL INPUT PULSES

VCC

10% 90%

90%

10%

R2

GND

Rise Time = 1 V/ns

Fall Time = 1 V/ns

Equivalent to: THEVENIN EQUIVALENT

OUTPUT

RTH

V

Parameters

2.50V

3.0V

Unit

R1

16667

1103

Ω

R2

15385

1554

Ω

RTH

8000

645

Ω

VTH

1.20

1.75

V

Data Retention Characteristics

Over the Operating Range

Parameter

Description

Conditions

Min Typ [3] Max Unit

VDR

VCC for Data Retention

1.5

V

ICCDR [7]

Data Retention Current VCC = 1.5V, CE > VCC – 0.2V,

VIN > VCC – 0.2V or VIN < 0.2V

Industrial/Auto-A

0.8

7

μA

tCDR [8]

Chip Deselect to Data

Retention Time

0

ns

tR [9]

Operation Recovery Time

tRC

ns

Figure 4. Data Retention Waveform

DATA RETENTION MODE

VCC

VCC(min)

VDR > 1.5V

VCC(min)

tCDR

tR

CE

Notes

8. Tested initially and after any design or process changes that may affect these parameters.

9. Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 μs or stable at VCC(min) > 100 μs.

Document Number: 38-05567 Rev. *D

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