PHK5NQ15T Просмотр технического описания (PDF) - Philips Electronics
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PHK5NQ15T Datasheet PDF : 12 Pages
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Philips Semiconductors
PHK5NQ15T
TrenchMOS™ standard level FET
5
VGS(th)
(V)
4
3
max
typ
03aa32
10-1
ID
(A)
10-2
10-3
03aa35
min typ
max
2
min
10-4
1
10-5
0
-60
0
60
120 Tj (°C) 180
10-6
0
2
4
6
VGS (V)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Tj = 25 °C; VDS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
4
IS
(A)
3
003aaa247
150 °C
2
Tj = 25 °C
1
104
C
(pF)
103
102
003aaa248
Ciss
Coss
Crss
0
0
0.2
0.4
0.6
0.8
1
VSD (V)
10
10-1
1
10
102
VDS (V)
Tj = 25 °C and 150 °C; VGS = 0 V
Fig 11. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
VGS = 0 V; f = 1 MHz.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 10774
Product data
Rev. 01 — 20 January 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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