PHK5NQ15T Просмотр технического описания (PDF) - Philips Electronics
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PHK5NQ15T Datasheet PDF : 12 Pages
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Philips Semiconductors
PHK5NQ15T
TrenchMOS™ standard level FET
4 10 V 3.8 V
ID
003aaa244
VGS = 3.6 V
8
ID
(A)
(A)
3
6
003aaa245
2
4
3.4 V
Tj = 150 °C
1
3.2 V
3.0 V
0
0
0.5
1
1.5
2
VDS (V)
25 °C
2
0
2
3
VGS (V) 4
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
200
003aaa246
2.5
a
RDSon
(mΩ)
2
3.4 V
3.6 V
3.8 V
150
1.5
03al51
100
1
VGS = 5 V
50
0.5
10 V
0
0
2
4
6 ID (A) 8
0
-60
0
60
120
180
Tj (°C)
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 10774
Product data
Rev. 01 — 20 January 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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