PHK5NQ15T Просмотр технического описания (PDF) - Philips Electronics
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PHK5NQ15T Datasheet PDF : 12 Pages
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Philips Semiconductors
PHK5NQ15T
TrenchMOS™ standard level FET
120
Pder
(%)
80
03aa17
120
Ider
(%)
80
03aa25
40
40
0
0
50
100
Pder
=
-------P----t--o---t-------
P
×
100%
t o t ( 25 °C )
150
200
Tsp (°C)
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
102
ID
(A)
10
Limit RDSon = VDS/ID
1
10-1
0
0
50
100
150
200
Tsp (°C)
VGS ≥ 10 V
Ider
=
--------I--D---------
I
×
100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
003aaa242
tp = 10 µs
1 ms
10 ms
DC
100 ms
10-2
10-1
1
10
102
103
VDS (V)
Tsp = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 10774
Product data
Rev. 01 — 20 January 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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