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PHK5NQ15T

TrenchMOS™ standard level FET

Philips Electronics 

Philips Semiconductors

PHK5NQ15T

TrenchMOS™ standard level FET

5. Characteristics

Table 4: Characteristics

Tj = 25 °C unless otherwise specified

Symbol Parameter

Conditions

Static characteristics

V(BR)DSS drain-source breakdown voltage

VGS(th) gate-source threshold voltage

IDSS

drain-source leakage current

IGSS

RDSon

gate-source leakage current

drain-source on-state resistance

Dynamic characteristics

ID = 250 µA; VGS = 0 V

Tj = 25 °C

Tj = −55 °C

ID = 1 mA; VDS = VGS; Figure 9

Tj = 25 °C

Tj = 150 °C

Tj = −55 °C

VDS = 120 V; VGS = 0 V

Tj = 25 °C

Tj = 150 °C

VGS = ±10 V; VDS = 0 V

VGS = 10 V; ID = 5 A; Figure 7 and 8

Tj = 25 °C

Tj = 150 °C

VGS = 5 V; ID = 3 A

Qg(tot) total gate charge

Qgs

gate-source charge

Qgd

gate-drain (Miller) charge

Ciss

input capacitance

Coss

output capacitance

Crss

reverse transfer capacitance

td(on)

turn-on delay time

tr

rise time

td(off)

turn-off delay time

tf

fall time

Source-drain diode

ID = 5 A; VDD = 75 V; VGS = 10 V; Figure 13

VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12

VDD = 75 V; ID = 5A; VGS = 10 V; RG = 6 Ω

VSD

source-drain (diode forward) voltage IS = 5 A; VGS = 0 V; Figure 11

trr

reverse recovery time

Qr

recovered charge

IS = 5 A; dIS/dt = −100 A/µs; VR = 90 V;

VGS = 0 V

Min Typ Max Unit

150 -

-

V

134 -

-

V

23

1.2 -

-

-

4V

-

V

4.5 V

-

-

1 µA

-

-

100 µA

-

10 100 nA

-

56 75 mΩ

-

129 173 mΩ

-

60 80 mΩ

-

29 -

nC

-

3-

nC

-

12 -

nC

-

1150 -

pF

-

187 -

pF

-

61 -

pF

-

12 -

ns

-

12 -

ns

-

35 -

ns

-

18 -

ns

-

0.8 1.2 V

-

87 -

ns

-

162 -

nC

9397 750 10774

Product data

Rev. 01 — 20 January 2003

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

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