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PHB101NQ04T

N-channel TrenchMOS standard level FET

NXP Semiconductors. 

NXP Semiconductors

PHB101NQ04T

N-channel TrenchMOS standard level FET

15

RDSon

(mΩ)

Tj = 25 °C

VGS = 7 V

10

03aq94

8V

9V

10 V

5

0

0

80

160 ID (A) 240

2

a

03aa27

1.5

1

0.5

0

-60

0

60

120 Tj (°C) 180

Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance

of drain current; typical values

factor as a function of junction temperature

10

VGS

(V)

8

ID = 25 A

Tj = 25 °C

6

14 V

03aq98

VDD = 32 V

4

2

0

0

10

20

30 QG (nC) 40

104

C

(pF)

103

102

10-1

1

03aq97

Ciss

Coss

Crss

10

102

VDS (V)

Fig 11. Gate-source voltage as a function of gate

charge; typical values

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

PHB101NQ04T_2

Product data sheet

Rev. 02 — 10 March 2009

© NXP B.V. 2009. All rights reserved.

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