PHB101NQ04T Просмотр технического описания (PDF) - NXP Semiconductors.
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PHB101NQ04T Datasheet PDF : 12 Pages
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NXP Semiconductors
PHB101NQ04T
N-channel TrenchMOS standard level FET
120
Ider
(%)
80
03aq90
120
Pder
(%)
80
03aa16
40
40
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
103
ID
(A)
Limit RDSon = VDS / ID
102
DC
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03aq92
tp = 10 μ s
100 μ s
1 ms
10 ms
100 ms
1
1
10
102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PHB101NQ04T_2
Product data sheet
Rev. 02 — 10 March 2009
© NXP B.V. 2009. All rights reserved.
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