PHB101NQ04T Просмотр технического описания (PDF) - NXP Semiconductors.
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PHB101NQ04T Datasheet PDF : 12 Pages
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NXP Semiconductors
PHB101NQ04T
N-channel TrenchMOS standard level FET
240
ID
(A)
Tj = 25 °C
160
80
0
0
1
10 V
03aq93
9V
8V
7V
6V
VGS = 5 V
2
3
4
VDS (V)
80
ID
(A)
VDS > ID x RDSon
60
03aq95
40
20
Tj = 175 °C
25 °C
0
0
2
4
6 VGS (V) 8
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
5
VGS(th)
(V)
4
max
03aa32
10−1
ID
(A)
10−2
03aa35
min typ max
3
typ
2
min
10−3
10−4
1
10−5
0
−60
0
60
120
180
Tj (°C)
10−6
0
2
4
6
VGS (V)
Fig 7. Gate-source threshold voltage as a function of Fig 8. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
PHB101NQ04T_2
Product data sheet
Rev. 02 — 10 March 2009
© NXP B.V. 2009. All rights reserved.
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