G50T60(2009) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

Список матч

G50T60
(Rev.:2009)

Low Loss IGBT in TrenchStop® and Fieldstop technology

Infineon Technologies 

TrenchStop® Series

IGP50N60T

IGW50N60T

D=0.5

10-1K/W

0.2

0.1

0.05

10-2K/W

0.02

R,(K/W)

0.18355

0.12996

0.09205

0.03736

0.00703

R1

τ, (s)

7.425*10-2

8.34*10-3

7.235*10-4

1.035*10-4

4.45*10-5

R2

0.01

C1=τ1/R1 C2=τ2/R2

single pulse

1µs 10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH

Figure 21. IGBT transient thermal resistance

(D = tp / T)

Power Semiconductors

9

Rev. 2.6 Nov. 09

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