G50T60(2009) Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге

Компоненты Описание

Список матч

G50T60
(Rev.:2009)

Low Loss IGBT in TrenchStop® and Fieldstop technology

Infineon Technologies 

TrenchStop® Series

IGP50N60T

IGW50N60T

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=25°C,

VCC=400V,IC=50A,

VGE=0/15V,

RG= 7 Ω,

Lσ1)=103nH,

Cσ1)=39pF

Energy losses include

“tail” and diode

reverse recovery.2)

min.

-

-

-

-

-

-

-

Value

Typ.

26

29

299

29

1.2

1.4

2.6

Unit

max.

- ns

-

-

-

- mJ

-

-

Switching Characteristic, Inductive Load, at Tj=150 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=175°C,

VCC=400V,IC=50A,

VGE=0/15V,

RG= 7 Ω

Lσ1)=103nH,

Cσ1)=39pF

Energy losses include

“tail” and diode

reverse recovery. 2 )

min.

-

-

-

-

-

-

-

Value

Typ.

27

33

341

55

1.8

1.8

3.6

Unit

max.

- ns

-

-

-

- mJ

-

-

1) Leakage inductance Lσ an d Stray capacity C σ due to dynamic test circuit in Figure E.

2) Includes Reverse Recovery Losses from IKW50N60T due to dynamic test circuit in Figure E.

Power Semiconductors

3

Rev. 2.6 Nov. 09

Share Link: