G50T60(2009) Просмотр технического описания (PDF) - Infineon Technologies

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G50T60
(Rev.:2009)

Low Loss IGBT in TrenchStop® and Fieldstop technology

Infineon Technologies 

TrenchStop® Series

IGP50N60T

IGW50N60T

140A

120A

100A

80A

60A

40A

TC=80°C

TC=110°C

Ic

20A

0A

100Hz

Ic

1kHz

10kHz

100kHz

f, SWITCHING FREQUENCY

Figure 1. Collector current as a function of

switching frequency

(Tj ≤ 175°C, D = 0.5, VCE = 400V,

VGE = 0/+15V, RG = 7Ω)

100A

10A

tp=2µs

10µs

50µs

1ms

1A

DC

10ms

1V

10V

100V

1000V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 2. Safe operating area

(D = 0, TC = 25°C, Tj ≤175°C;

VGE=15V)

300W

250W

200W

150W

100W

50W

0W

25°C 50°C 75°C 100°C 125°C 150°C

Figure 3.

TC, CASE TEMPERATURE

Power dissipation as a function of

case temperature

(Tj ≤ 175°C)

80A

60A

40A

20A

0A

25°C

75°C

125°C

TC, CASE TEMPERATURE

Figure 4. Collector current as a function of

case temperature

(VGE ≥ 15V, Tj ≤ 175°C)

Power Semiconductors

4

Rev. 2.6 Nov. 09

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