G50T60(2009) Просмотр технического описания (PDF) - Infineon Technologies

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G50T60
(Rev.:2009)

Low Loss IGBT in TrenchStop® and Fieldstop technology

Infineon Technologies 

Thermal Resistance

Parameter

Characteristic

IGBT thermal resistance,

junction – case

Thermal resistance,

junction – ambient

TrenchStop® Series

IGP50N60T

IGW50N60T

Symbol

Conditions

RthJC

RthJA

PG-TO-220-3-1

PG-TO-247-3-21

Max. Value

Unit

0.45

K/W

62

40

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current

Transconductance

Integrated gate resistor

V(BR)CES

VCE(sat)

VGE(th)

ICES

VGE=0V, IC=0.2mA

VGE = 15V, IC=50A

Tj=25°C

Tj=175°C

IC=0.8mA,VCE=VGE

VCE=600V,

VGE=0V

Tj=25°C

Tj=175°C

IGES

gfs

RGint

VCE=0V,VGE=20V

VCE=20V, IC=50A

min.

600

-

-

4.1

-

-

-

-

Value

Typ.

-

1.5

1.9

4.9

-

-

-

31

-

Unit

max.

-V

2.0

-

5.7

µA

40

1000

100 nA

-S

Ω

Dynamic Characteristic

Input capacitance

Ciss

VCE=25V,

-

Output capacitance

Coss

VGE=0V,

-

Reverse transfer capacitance

Crss

f=1MHz

-

Gate charge

QGate

VCC=480V, IC=50A

-

VGE=15V

Internal emitter inductance

LE

PG-TO-220-3-1

-

measured 5mm (0.197 in.) from case

PG-TO-247-3-21

-

Short circuit collector current1)

IC(SC)

VGE=15V,tSC≤5µs

-

VCC = 400V,

Tj ≤ 150°C

3140

200

93

310

7

13

458.3

- pF

-

-

- nC

- nH

-

-A

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

2

Rev. 2.6 Nov. 09

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