IDT7006S(2018) Просмотр технического описания (PDF) - Integrated Device Technology
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IDT7006S Datasheet PDF : 21 Pages
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IDT7006S/L
High-Speed 16K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the 0perating
Temperature and Supply Voltage Range (VCC = 5.0V ± 10%)
7006S
7006L
Symbol
|ILI|
Parameter
Input Leakage Current(1)
Test Conditions
VCC = 5.5V, VIN = 0V to VCC
Min.
Max.
Min.
Max. Unit
___
10
___
5
µA
|ILO|
Output Leakage Current
VOL
Output Low Voltage
VOH
Output High Voltage
NOTE:
1. At Vcc < 2.0V input leakages are undefined.
CE = VIH, VOUT = 0V to VCC
IOL = 4mA
IOH = -4mA
___
10
___
5
µA
___
0.4
___
0.4
V
2.4
___
2.4
___
V
2739 tbl 08
Data Retention Characteristics Over All Temperature Ranges
(L Version Only) (VLC = 0.2V, VHC = VCC - 0.2V)
Symbol
Parameter
Test Condition
Min.
Typ. (1)
VDR
VCC for Data Retention
VCC = 2V
2.0
___
ICCDR
Data Retention Current
CE > VHC
Mil. & Ind.
___
100
VIN > VHC or < VLC
Com'l.
___
100
tCDR(3) Chip Deselect to Data Retention Time
SEM > VHC
0
___
tR(3)
Operation Recovery Time
tRC(2)
___
NOTES:
1. TA = +25°C, VCC = 2V, and are not production tested.
2. tRC = Read Cycle Time
3. This parameter is guaranteed by characterization, but is not production tested.
Max. Unit
___
V
4000 µA
1500
___
ns
___
ns
2739 tbl 09
Data Retention Waveform
VCC
CE
4.5V
tCDR
VIH
DATA RETENTION MODE
VDR > 2V
VDR
4.5V
tR
VIH
2739 drw 05
6.542
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