P4C163-25CM Просмотр технического описания (PDF) - Performance Semiconductor
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P4C163-25CM Datasheet PDF : 8 Pages
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POWER DISSIPATION CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
Symbol
Parameter
Test Conditions
ICC Dynamic Operating
Current – 25
VCC = Max., f = Max.,
Outputs Open
ICC Dynamic Operating
Current – 35, 45
VCC = Max., f = Max.,
Outputs Open
ISB Standby Power Supply
CE1 ≥ VIH or
Current (TTL Input Levels) CE2 ≤ VIL, VCC = Max.,
f = Max., Outputs Open
ISB1 Standby Power Supply
Current
(CMOS Input Levels)
CE1 ≥ VHC or
CE2 ≤ VLC, VCC = Max.,
f = 0, Outputs Open,
V
IN
≤
V
LC
or
V
IN
≥
V
HC
n/a = Not Applicable
Mil.
Com’l.
Mil.
Com’l.
Mil.
Com’l.
Mil.
Com’l.
P4C163
Min Max
— 145
— 125
— 120
—
95
—
40
—
35
—
20
—
18
P4C163/163L
P4C163L
Unit
Min Max
—
145 mA
—
N/A
—
120 mA
—
N/A
—
40 mA
—
N/A
—
1
mA
—
N/A
DATA RETENTION CHARACTERISTICS (P4C163L, Military Temperature Only)
Symbol
Parameter
Test Condition
Min
VDR
I
CCDR
tCDR
t†
R
VCC for Data Retention
2.0
Data Retention Current
Chip Deselect to
Data Retention Time
CE
1
≥
VCC
–
0.2V
or
CE2 ≤ 0.2V, VIN ≥ VCC – 0.2V 0
or VIN ≤ 0.2V
Operation Recovery Time
t§
RC
Typ.*
VCC=
2.0V 3.0V
10
15
Max
VCC=
2.0V 3.0V
200 300
Unit
V
µA
ns
ns
*T
A
=
+25°C
§tRC = Read Cycle Time
†This parameter is guaranteed but not tested.
DATA RETENTION WAVEFORM
DATA RETENTION MODE
VCC
4.5V
VDR ≥ 2V
4.5V
t CDR
tR
CE1
VHC
VDR
VHC
CE2
VLC
VLC
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