BUK9006-55A Просмотр технического описания (PDF) - Philips Electronics
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BUK9006-55A Datasheet PDF : 10 Pages
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Philips Semiconductors
BUK9006-55A
TrenchMOS™ logic level FET
100
ID
(A)
75
50
25
03nn85
Tj = 175 °C
Tj = 25 °C
5
VGS
(V)
4
3
2
1
03nn83
VDD = 14 V
VDD = 44 V
0
0
1
2
3
4
VGS (V)
0
0
25
50
75
100
QG (nC)
VDS = 25 V
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj = 25 °C; ID = 25 A
Fig 10. Gate-source voltage as a function of gate
charge; typical values.
100
IS
(A)
75
03nn82
50
25
Tj = 175 °C
Tj = 25 °C
0
0.0
0.3
0.6
0.9
1.2
VSD (V)
VGS = 0 V
Fig 11. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
Remark: Figures 9, 10, and 11 measured on die assembled in SOT78 with
3 x 350 µm source bond wires.
9397 750 11571
Preliminary data
Rev. 01 — 1 August 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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