BUK9006-55A Просмотр технического описания (PDF) - Philips Electronics
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BUK9006-55A Datasheet PDF : 10 Pages
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Philips Semiconductors
BUK9006-55A
TrenchMOS™ logic level FET
400
10
ID
8
(A) 6
300
200
100
0
0
2
5 4.8
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
4
03nn87
Label is VGS (V)
6
8
10
VDS (V)
9
RDSon
(mΩ)
8
7
6
5
0
03nn86
5
10
15
VGS (V)
Tj = 25 °C; tp = 300 µs
Fig 1. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 25 A
Fig 2. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
20
03nn88
2
RDSon
(mΩ)
Label is VGS (V)
a
3
1.5
3.2
4
15 3.4
3.6
3.8
1
03ne89
10
5
0.5
10
5
0
100
200
Tj = 25 °C; tp = 300 µs
300
400
ID (A)
Fig 3. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 4. Normalized drain-source on-state resistance
factor as a function of junction temperature.
Remark: Figures 1, 2, and 3 measured on die assembled in SOT78 with
3 x 350 µm source bond wires.
9397 750 11571
Preliminary data
Rev. 01 — 1 August 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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