BUK9006-55A Просмотр технического описания (PDF) - Philips Electronics
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BUK9006-55A Datasheet PDF : 10 Pages
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Philips Semiconductors
BUK9006-55A
TrenchMOS™ logic level FET
2.5
VGS(th)
(V)
2
1.5
1
max
typ
min
03aa33
10-1
ID
(A)
10-2
10-3
10-4
03aa36
min typ
max
0.5
10-5
0
-60
0
60
120
180
Tj (°C)
10-6
0
1
2
3
VGS (V)
ID = 1 mA; VDS = VGS
Fig 5. Gate-source threshold voltage as a function of
junction temperature.
Tj = 25 °C; VDS = VGS
Fig 6. Sub-threshold drain current as a function of
gate-source voltage.
120
gfs
(S)
80
03nn84
12000
C
(pF)
8000
Ciss
Coss
Crss
03nn89
40
4000
0
0
20
40
60
80
ID (A)
Tj = 25 °C; VDS = 25 V
Fig 7. Forward transconductance as a function of
drain current; typical values.
0
10-2
10-1
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 8. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 11571
Preliminary data
Rev. 01 — 1 August 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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