74HC3G34 Просмотр технического описания (PDF) - Philips Electronics
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74HC3G34 Datasheet PDF : 16 Pages
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Philips Semiconductors
Triple buffer gate
Product specification
74HC3G34; 74HCT3G34
Type 74HCT3G34
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
Tamb = −40 to +85 °C; note 1
VIH
HIGH-level input voltage
VIL
LOW-level input voltage
VOH
HIGH-level output voltage
VOL
LOW-level output voltage
ILI
input leakage current
ICC
quiescent supply current
∆ICC
additional supply current
per input
Tamb = −40 to +125 °C
VIH
HIGH-level input voltage
VIL
LOW-level input voltage
VOH
HIGH-level output voltage
VOL
LOW-level output voltage
ILI
ICC
∆ICC
input leakage current
quiescent supply current
additional supply current
per input
TEST CONDITIONS
OTHER
VCC (V)
VI = VIH or VIL
IO = −20 µA
IO = −4.0 mA
VI = VIH or VIL
IO = 20 µA
IO = 4.0 mA
VI = VCC or GND
VI = VCC or GND;
IO = 0
VI = VCC − 2.1 V;
IO = 0
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
5.5
4.5 to 5.5
VI = VIH or VIL
IO = −20 µA
IO = −4.0 mA
VI = VIH or VIL
IO = 20 µA
IO = 4.0 mA
VI = VCC or GND
VI = VCC or GND;
IO = 0
VI = VCC − 2.1 V;
IO = 0
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
5.5
4.5 to 5.5
MIN.
2.0
−
4.4
4.13
−
−
−
−
−
2.0
−
4.4
3.7
−
−
−
−
−
TYP.
1.6
1.2
4.5
4.32
0
0.15
−
−
−
−
−
−
−
−
−
−
−
−
Note
1. All typical values are measured at Tamb = 25 °C.
MAX. UNIT
−
V
0.8
V
−
V
−
V
0.1
V
0.33 V
±1.0
µA
10
µA
375
µA
−
V
0.8
V
−
V
−
V
0.1
V
0.4
V
±1.0
µA
20
µA
410
µA
2003 May 19
8
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