74HC3G34 Просмотр технического описания (PDF) - Philips Electronics
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74HC3G34 Datasheet PDF : 16 Pages
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Philips Semiconductors
Triple buffer gate
Product specification
74HC3G34; 74HCT3G34
SYMBOL
PARAMETER
TEST CONDITIONS
OTHER
VCC (V)
Tamb = −40 to +125 °C
VIH
HIGH-level input voltage
2.0
4.5
6.0
VIL
LOW-level input voltage
2.0
4.5
6.0
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −20 µA
2.0
IO = −20 µA
4.5
IO = −20 µA
6.0
IO = −4.0 mA
4.5
IO = −5.2 mA
6.0
VOL
LOW-level output voltage VI = VIH or VIL
IO = 20 µA
2.0
IO = 20 µA
4.5
IO = 20 µA
6.0
IO = 4.0 mA
4.5
IO = 5.2 mA
6.0
ILI
input leakage current
VI = VCC or GND
6.0
ICC
quiescent supply current VI = VCC or GND;
6.0
IO = 0
Note
1. All typical values are measured at Tamb = 25 °C.
MIN.
1.5
3.15
4.2
−
−
−
1.9
4.4
5.9
3.7
5.2
−
−
−
−
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MAX. UNIT
−
V
−
V
−
V
0.5
V
1.35 V
1.8
V
−
V
−
V
−
V
−
V
−
V
0.1
V
0.1
V
0.1
V
0.4
V
0.4
V
±1.0
µA
20
µA
2003 May 19
7
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