74HC3G34 Просмотр технического описания (PDF) - Philips Electronics

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74HC3G34

Triple buffer gate

Philips Electronics 

Philips Semiconductors

Triple buffer gate

Product specification

74HC3G34; 74HCT3G34

RECOMMENDED OPERATING CONDITIONS

SYMBOL

PARAMETER

VCC

VI

VO

Tamb

supply voltage

input voltage

output voltage

operating ambient

temperature

tr, tf

input rise and fall times

CONDITIONS

74HC3G34

74HCT3G34

UNIT

MIN. TYP. MAX. MIN. TYP. MAX.

2.0 5.0 6.0 4.5 5.0 5.5 V

0

−

VCC 0

−

VCC V

0

−

VCC 0

−

VCC V

see DC and AC −40 +25 +125 −40 +25 +125 °C

characteristics per

device

VCC = 2.0 V

VCC = 4.5 V

VCC = 6.0 V

−

−

1000 −

−

−

ns

−

6.0 500 −

6.0 500 ns

−

−

400 −

−

−

ns

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).

SYMBOL

PARAMETER

VCC

supply voltage

IIK

input diode current

IOK

output diode current

IO

output source or sink current

ICC

VCC or GND current

Tstg

storage temperature

PD

power dissipation

CONDITIONS

VI < −0.5 V or VI > VCC + 0.5 V; note 1

VO < −0.5 V or VO > VCC + 0.5 V; note 1

−0.5 V < VO < VCC + 0.5 V; note 1

note 1

Tamb = −40 to +125 °C; note 2

MIN.

−0.5

−

−

−

−

−65

−

MAX. UNIT

+7.0 V

±20 mA

±20 mA

25

mA

50

mA

+150 °C

300 mW

Notes

1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

2. Above 55 °C the value of PD derates linearly with 2.5 mW/K.

2003 May 19

5

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