74HC3G34 Просмотр технического описания (PDF) - Philips Electronics
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74HC3G34 Datasheet PDF : 16 Pages
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Philips Semiconductors
Triple buffer gate
Product specification
74HC3G34; 74HCT3G34
DC CHARACTERISTICS
Type 74HC3G34
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
Tamb = −40 to +85 °C; note 1
VIH
HIGH-level input voltage
VIL
LOW-level input voltage
VOH
HIGH-level output voltage
VOL
LOW-level output voltage
ILI
input leakage current
ICC
quiescent supply current
TEST CONDITIONS
OTHER
VCC (V)
2.0
4.5
6.0
2.0
4.5
6.0
VI = VIH or VIL
IO = −20 µA
2.0
IO = −20 µA
4.5
IO = −20 µA
6.0
IO = −4.0 mA
4.5
IO = −5.2 mA
6.0
VI = VIH or VIL
IO = 20 µA
2.0
IO = 20 µA
4.5
IO = 20 µA
6.0
IO = 4.0 mA
4.5
IO = 5.2 mA
6.0
VI = VCC or GND
6.0
VI = VCC or GND;
6.0
IO = 0
MIN.
1.5
3.15
4.2
−
−
−
1.9
4.4
5.9
4.13
5.63
−
−
−
−
−
−
−
TYP.
1.2
2.4
3.2
0.8
2.1
2.8
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
−
−
MAX. UNIT
−
V
−
V
−
V
0.5
V
1.35 V
1.8
V
−
V
−
V
−
V
−
V
−
V
0.1
V
0.1
V
0.1
V
0.33 V
0.33 V
±1.0
µA
10
µA
2003 May 19
6
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