HAT1016R(D) Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
Список матч
HAT1016R(D) Datasheet PDF : 9 Pages
| |||
HAT1016R
1000
500
200
100
50
Body–Drain Diode Reverse
Recovery Time
di / dt = 20 A / µs
VGS = 0, Ta = 25 °C
20
10
–0.1 –0.2 –0.5 –1 –2 –5 –10
Reverse Drain Current I DR (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30
VGS = 0
f = 1 MHz
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
0
0
VDD = –5 V
–10 V
–10
–25 V
–4
–20
V GS
V DS
–30
V DD = –25 V
–10 V
–40
–5 V
–50 I D = –4.5 A
0
8
16 24 32
Gate Charge Qg (nc)
–8
–12
–16
–20
40
Reverse Drain Current vs.
Source to Drain Voltage
–20
–16
VGS = –5 V
–12
0, 5 V
–8
–4
Pulse Test
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V SD (V)
5
Share Link: 