HAT1016R(D) Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HAT1016R(D)

Silicon P Channel Power MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

HAT1016R

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–0.5

Pulse Test

–0.4

–0.3

–0.2

I D = –2 A

–0.1

–1 A

–0.5 A

0

–2 –4 –6 –8 –10

Gate to Source Voltage V GS (V)

Static Drain to Source on State Resistance

vs. Drain Current

1

Pulse Test

0.5

0.2

0.1

0.05

VGS = –4 V

–10 V

0.02

0.01

–0.2

–0.5 –1 –2 –5 –10 –20

Drain Current I D (A)

Static Drain to Source on State Resistance

vs. Temperature

0.20

I D = –0.5, –1, –2 A

0.16

0.12 VGS = –4 V

0.08

0.04

0

–40

–10 V

–0.5, –1, –2 A

Pulse Test

0

40 80 120 160

Case Temperature Tc (°C)

Forward Transfer Admittance vs.

Drain Current

20

10

Tc = –25 °C

5

25 °C

2

75 °C

1

0.5

0.2

–0.2

V DS = –10 V

Pulse Test

–0.5 –1 –2 –5 –10 –20

Drain Current I D (A)

4

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