HAT1016R(D) Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HAT1016R(D)

Silicon P Channel Power MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

Main Characteristics

HAT1016R

Power vs. Temperature Derating

4.0

Test Condition :

When using the glass epoxy board

(FR4 40x40x1.6 mm), PW < 10 s

3.0

2.0

1.0

1 Drive Operation

0

50

100

150

200

Ambient Temperature Ta (°C)

–100

–30

Maximum Safe Operation Area

100 µs 10 µs

–10

–3

–1

–0.3

–0.1

OperatioDnCinOperationP(WPW=

this area is

limited by R DS(on)

1 ms

10 ms

<No1t0e

5

s)

Ta = 25 °C

–0.03 1 shot Pulse

–0.01 1 Drive Operation

–0.1 –0.3 –1 –3

–10 –30 –100

Drain to Source Voltage V DS (V)

Note 5 :

When using the glass epoxy board

(FR4 40 x 40 x 1.6 mm)

Typical Output Characteristics

–10 V –8 V

–20

–6 V

–4.5 V

–16

–5 V

Pulse Test

–4 V

–12

–3.5 V

–8

–3 V

–4

–2.5 V

VGS = –2 V

0

–2 –4 –6 –8 –10

Drain to Source Voltage V DS (V)

Typical Transfer Characteristics

–20

V DS = –10 V

Pulse Test

–16

–12

–8

Tc = 75 °C

–4

25 °C

–25 °C

0

–1 –2 –3 –4 –5

Gate to Source Voltage V GS (V)

3

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