HAT1016R(D) Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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HAT1016R(D) Datasheet PDF : 9 Pages
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HAT1016R
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting
Outline
ADE-208-471 D (Z)
5th. Edition
February 1999
SOP–8
78
DD
8 7 65
1 234
56
DD
2
4
G
G
S1
MOS1
S3
MOS2
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
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