MBM29DL321BD Просмотр технического описания (PDF) - Fujitsu
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MBM29DL321BD Datasheet PDF : 84 Pages
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MBM29DL32XTD/BD-80/90/12
s ELECTRICAL CHARACTERISTICS
1. DC Characteristics
Parameter
Symbol
Conditions
Input Leakage Current
ILI
Output Leakage Current
ILO
A9, OE, RESET Inputs Leakage
Current
ILIT
VCC Active Current (Note 1)
ICC1
VCC Active Current (Note 2)
ICC2
VCC Current (Standby)
ICC3
VCC Current (Standby, Reset)
ICC4
VCC Current
(Automatic Sleep Mode) (Note 3)
ICC5
VCC Active Current (Note 5)
(Read-While-Program)
ICC6
VCC Active Current (Note 5)
(Read-While-Erase)
ICC7
VCC Active Current
(Erase-Suspend-Program)
ICC8
ACC Accelerated Program
Current
IACC
Input Low Level
VIL
Input High Level
VIH
Voltage for WP/ACC Sector
Protection/Unprotection and
VACC
Program Acceleration
Voltage for Autoselect and Sector
Protection (A9, OE, RESET)
VID
(Note 4)
VIN = VSS to VCC, VCC = VCC Max.
VOUT = VSS to VCC, VCC = VCC Max.
VCC = VCC Max.
A9, OE, RESET = 12.5 V
CE = VIL, OE = VIH,
f = 5 MHz
Byte
Word
CE = VIL, OE = VIH,
f = 1 MHz
Byte
Word
CE = VIL, OE = VIH
VCC = VCC Max., CE = VCC ± 0.3 V,
RESET = VCC ± 0.3 V
VCC = VCC Max.,WE/ACC = VCC ±
0.3 V, RESET = VSS ± 0.3 V
VCC = VCC Max., CE = VSS ± 0.3 V,
RESET = VCC ± 0.3 V
VIN = VCC ± 0.3 V or VSS ± 0.3 V
CE = VIL, OE = VIH
Byte
Word
CE = VIL, OE = VIH
Byte
Word
CE = VIL, OE = VIH
VCC = VCC Max.
WP/ACC = VACC Max.
—
—
—
—
Value
Unit
Min.
Max.
–1.0
+1.0
µA
–1.0
+1.0
µA
—
35
µA
16
—
mA
18
7
—
mA
7
—
35
mA
—
5
µA
—
5
µA
—
5
µA
—
51
mA
—
53
—
51
mA
—
53
—
35
mA
—
–0.5
2.0
20
mA
0.6
V
VCC+0.3
V
8.5
9.5
V
11.5
12.5
V
(Continued)
Notes: 1. The ICC current listed includes both the DC operating current and the frequency dependent component.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
4. Applicable for only VCC applying.
5. Embedded Algorithm (program or erase) is in progress. (@5 MHz)
12
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