MBM29DL321BD Просмотр технического описания (PDF) - Fujitsu

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MBM29DL321BD

32M (4M ×8/2M ×16) BIT Dual Operation

Fujitsu 

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20873-4E

FLASH MEMORY

CMOS

32M (4M × 8/2M × 16) BIT Dual Operation

MBM29DL32XTD/BD -80/90/12

s FEATURES

• 0.33 µm Process Technology

• Simultaneous Read/Write operations (dual bank)

Multiple devices available with different bank sizes (Refer to Table 1)

Host system can program or erase in one bank, then immediately and simultaneously read from the other bank

Zero latency between read and write operations

Read-while-erase

Read-while-program

• Single 3.0 V read, program, and erase

Minimizes system level power requirements

s PRODUCT LINE UP

(Continued)

Part No.

Ordering Part No.

VCC = 3.3 V

+0.3 V

–0.3 V

VCC = 3.0 V

+0.6 V

–0.3 V

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

MBM29DL32XTD/MBM29DL32XBD

80

—

—

—

90

12

80

90

120

80

90

120

30

35

50

s PACKAGES

48-pin plastic TSOP (I)

Marking Side

48-pin plastic TSOP (I)

57-ball plastic FBGA

(FPT-48P-M19)

Marking Side

(FPT-48P-M20)

Em\edded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.

(BGA-57P-M01)

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